A thermal activation model for 1/ƒy noise in Si-MOSFETs
- 31 May 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (5) , 959-964
- https://doi.org/10.1016/0038-1101(88)90051-2
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistorsPhysical Review B, 1987
- Spectral dependence of noise on gate bias in n-MOSFETSSolid-State Electronics, 1987
- Theory and experiment on the 1/noise inp-channel metal-oxide-semiconductor field-effect transistors at low drain biasPhysical Review B, 1986
- Low-frequency fluctuations in solids:noiseReviews of Modern Physics, 1981
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981
- Flicker Noise in Electronic DevicesPublished by Elsevier ,1979
- Carrier fluctuation noise in a MOSFET channel due to traps in the oxideSolid-State Electronics, 1978
- Theory of low frequency noise in Si MOST'sSolid-State Electronics, 1970
- Low frequency noise in MOS transistors—II ExperimentsSolid-State Electronics, 1968
- Low frequency noise in MOS transistors—I TheorySolid-State Electronics, 1968