Sputter deposition of Co–Cr thin-film media on high-speed rotating disk substrate

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Abstract
A sputtering system which is capable of depositing films onto the disk substrate, rotating at very high speed in the vacuum chamber, has been developed. The maximum rotational speed of about 10 000 rpm has been attained in the Facing Targets Sputtering apparatus for preparing Co–Cr perpendicular recording disks. Properties of the film deposited on the rotating disk substrates have been investigated with regard to (1) the absolute linear velocity (m/s) of the substrates, and (2) the relation between the rotational speed (rpm) of the substrates and the deposition rate of the film. The experimental results show that the linear velocity realized in this study was not high enough to give the significant effects on intrinsic properties of the films. This means that even such a dynamic motion of the substrate does not bring any negative effects on the microstructure of the film. Meanwhile, it has been found that the effect of the substrate rotation appeared very clearly on the growth mechanism of the film. That is, the dispersion of the c-axis orientation in the Co–Cr film becomes better with the increase of the rotational speed (rpm) of the substrates probably due to the quasiepitaxial growth of the film.

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