Electroluminescence from porous silicon using a conducting polyaniline contact
- 1 April 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 276 (1-2) , 299-302
- https://doi.org/10.1016/0040-6090(95)08102-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Thermoelectric power measurements in highly conductive stretch-oriented polyaniline filmsSynthetic Metals, 1995
- Electroluminescence from n+ -type porous silicon contacted with layer-by-layer deposited polyanilineThin Solid Films, 1995
- Electroluminescence from porous silicon with conducting polymer film contactsApplied Physics Letters, 1994
- The origin of efficient luminescence in highly porous siliconJournal of Luminescence, 1994
- Porous silicon electroluminescent devicesJournal of Luminescence, 1993
- Aging phenomena of light emitting porous siliconJournal of Luminescence, 1993
- Growth of polyaniline films on porous silicon layersJournal of Luminescence, 1993
- Optical properties of porous silicon: A first-principles studyPhysical Review Letters, 1992
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990