Photoluminescence and recombination centers in phosphorus-doped and undoped CdTe heat-treated under component vapour pressures
- 31 October 1980
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 21 (4) , 337-351
- https://doi.org/10.1016/0022-2313(80)90026-5
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- A Study of Annealing‐Induced Lattice Defects in P‐Doped CdTe by Transmission Electron MicroscopyJournal of the Electrochemical Society, 1979
- The Defect Structure of Phosphorus‐Doped CdTeJournal of the Electrochemical Society, 1977
- Excitation spectra of exciton luminescence in CdTePhysica Status Solidi (b), 1975
- Luminescence of exciton-neutral donor complex in CdTeSolid State Communications, 1974
- Magneto-Optics of Free and Bound Excitons in CdTePublished by Springer Nature ,1974
- Luminescence en bord de bande dans CdTe en relation avec le dopage et les traitements thermiquesPhysica Status Solidi (a), 1970
- Excitonic luminescence of cadmium tellurideJournal of Luminescence, 1970
- The Edge Emission and Phonon Effects in the Photoluminescence of CdTePhysica Status Solidi (b), 1969
- Photoluminescence of Defect-Exciton Complexes in II-VI CompoundsPhysical Review Letters, 1965
- Band edge emission properties of CdTeJournal of Physics and Chemistry of Solids, 1961