Emissivity Issues In Pyrometric Temperature Monitoring For RTP Systems

6 April 1990

proceedings article
Published by SPIE-Intl Soc Optical Eng

p. 72-82
https://doi.org/10.1117/12.963960

Abstract

The emissivity of silicon wafers determine the temperature control in closed loop rapid thermal processing (RTP) systems. Silicon surface roughness, doping, and layers affect the intrinsic wafer emissivity, while RTP chamber walls reflectance reduces the amplitude of these effects. For temperatures below 600V, device side topography and layers also affect the emissivity of the wafer. Narrow band and wide band pyrometers show similar behavior with respect to layers on the wafer, as indicated by experimental and modeling techniques.

Keywords

DOPING
MODELING
PYROMETRY
REFLECTIVITY
SILICON
SURFACE ROUGHNESS

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