Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence
- 1 May 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (5R)
- https://doi.org/10.1143/jjap.28.836
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Composition depth profiles of PtRh alloys in surface segregation, and cosegregation with sulfur impuritiesSurface Science, 1987
- Shape of atomic steps and interface supersaturation between LPE macrostepsJournal of Crystal Growth, 1986
- The Origin of Dark Region in LPE GaP Associating with Macrostep RiserJapanese Journal of Applied Physics, 1985
- Modern Crystallography IIIPublished by Springer Nature ,1984
- Determination of the nitrogen doping of liquid phase epitaxy GaP and GaxIn1−xP alloys by optical absorption and photoluminescenceJournal of Applied Physics, 1983
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974
- GROWTH OF COPOLYMER CHAINS AND MIXED CRYSTALS—TRIAL-AND-ERROR STATISTICSSoviet Physics Uspekhi, 1970
- A possible mechanism of crystal growth from the melt and its application to the problem of anomalous segregation at crystal facetsSolid-State Electronics, 1961
- The Distribution of Solute in Crystals Grown from the Melt. Part I. TheoreticalThe Journal of Chemical Physics, 1953