Photovoltaic Properties of a Si–F–H and a·Si–H Prepared by DC Glow Discharge
- 1 January 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (S2) , 105
- https://doi.org/10.7567/jjaps.19s2.105
Abstract
Amorphous Si–F–H films were prepared by DC glow discharge in an atmosphere of SiF4+H2. Optical and electrical measurements have been performed to evaluate the film quality. The photoconductivity of a ·Si–F–H films under sunlight is identical with a·Si–H films produced from SiH4 and Δσph obtained is 4×10-4 (Ωcm)-1. The initial Schottky barrier a·Si–F–H solar cell showed the efficiency of 1% under simulated AM1, 100 mW/cm2 insolation. Furthermore, the fill factor of solar cells is related to the minority carrier diffusion length in the undoped a·Si layer.Keywords
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