High-speed photodetectors
- 1 January 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 54 (10) , 1335-1349
- https://doi.org/10.1109/proc.1966.5121
Abstract
This paper is intended as a status report on high-speed detectors for the visible and near-infrared portion of the optical spectrum. Both vacuum and solid-state detectors are discussed, with the emphasis on those devices which can be used as direct (noncoherent) detectors of weak optical signals modulated at microwave frequencies. The best detectors for this application have internal current gain and in this regard the relevant properties and limitations of high-frequency secondary emission multiplication in vacuum tube devices and avalanche multiplication in p-n junctions are summarized.Keywords
This publication has 66 references indexed in Scilit:
- Signal and noise response of high speed germanium avalanche photodiodesIEEE Transactions on Electron Devices, 1966
- Detection of coherent optical radiationIEEE Spectrum, 1966
- High Frequency PhotodiodesApplied Optics, 1965
- Secondary-emission amplification at microwave frequenciesIEEE Journal of Quantum Electronics, 1965
- Photoparametric amplifierProceedings of the IEEE, 1965
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- The traveling-wave phototube part I: Theoretical analysisIEEE Transactions on Electron Devices, 1964
- Effect of an electrostatic field in the dynamic crossed-field photomultiplierProceedings of the IEEE, 1964
- Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect JunctionsJournal of Applied Physics, 1963
- Photo-mixing experiments at X bandProceedings of the IEEE, 1963