Evaluation of the stopping depth of nonradiative recombination centers in Al0.5Ga0.5As by Ar+ ion beam sputtering by photoluminescence measurements
- 1 July 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 8 (4) , 3274-3278
- https://doi.org/10.1116/1.576577
Abstract
The stopping depth of nonradiative recombination centers in Al0.5 Ga0.5 As by Ar+ ion beam sputtering was evaluated by photoluminescence (PL) measurements using Al0.5 Ga0.5 As/GaAs single heterostructures. Al0.5 Ga0.5 As layers were sputtered by an Ar+ ion beam with energies from 0.5 to 3 keV at temperatures from 0 to 300 °C. The PL intensity of the underlying GaAs was measured to detect the damage (nonradiative recombination center). The thickness of the residual Al0.5 Ga0.5 As layer at which the PL intensity of the GaAs began to fall was taken as the stopping depth of nonradiative recombination centers. This depth increased as Ar+ ion energy increased and sputtering temperature decreased. The depth of damage was roughly proportional to the Ar+ ion energy E at about 25 °C for E less than 3 keV.Keywords
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