Quantum motion of dislocations through local barriers

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Abstract
Quantum properties of a dislocation segment pinned at its ends and moving in a homogeneous external stress field of a localized defect are considered. A model Hamiltonian for such a system is suggested, and the quasiclassical spectrum and wave functions are found. The Gibbs averaged distribution of probability flow for the central dislocation element from the “before-defect” to the “behind-defect” regions is calculated. The effect of vibrations excited at the dislocation as it collides with the defect on the transition process through the barrier is discussed.