Photodiodes and junction field-effect transistors with high UV sensitivity
- 1 November 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (11) , 1203-1207
- https://doi.org/10.1109/T-ED.1976.18579
Abstract
Silicon photodiodes and photo-FET's with high blue and UV sensitivity have been produced by a special boron diffusion process. Diodes with a junction depth around 0.2 µm exhibit a responsivity of 0.1 A/W at 253 nm; the maximum responsivity (with a quantum efficiency close to 100 percent) is reached at 440 nm. The responsivity of the photo-FET's operating in the photoconductive mode (VGS= 0) exceeds 103A/W at 350 nm. The spectral response curve and the large-signal behavior of the photo-FET's are strongly dependent on the operating conditions.Keywords
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