Excitation spectroscopy in silicon: Pseudo-acceptor excited states of the isoelectronic A, B, C exciton system
- 31 March 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 117-118, 113-115
- https://doi.org/10.1016/0378-4363(83)90456-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- CW laser operation with new F+2-type color centers in NaFIEEE Journal of Quantum Electronics, 1982
- Room-temperature-stable, F_2^+-like center yields cw laser tunable over the 099–122-μm rangeOptics Letters, 1980
- Central cell effects on acceptor spectra in Si and GeSolid State Communications, 1980
- Excitons bound to an isoelectronic trap in siliconJournal of Luminescence, 1979
- Even-parity acceptor excited states in Si from bound exciton two hole transitionsSolid State Communications, 1977
- Excited states of excitons bound to nitrogen pairs in GaPPhysical Review B, 1977
- Acceptorlike ExcitedStates of Excitons Bound to Nitrogen Pairs in GaPPhysical Review Letters, 1975
- Exciton Energy Transfer in GaP: NPhysical Review Letters, 1975
- Stress Effects on Excitons Bound to Axially Symmetric Defects in SemiconductorsPhysical Review B, 1970