Nonlinear optical properties of semiconductor superlattices
- 1 July 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (1) , 499-509
- https://doi.org/10.1063/1.335653
Abstract
Theoretical calculations of the third-order susceptibility χ(3) in GaAs-AlxGa1−xAs and Hg1−xCdxTe-HgyCd1−yTe superlattices are reported. The conduction–band nonparabolicity effect and the photoexcited plasma effect are both considered.This publication has 27 references indexed in Scilit:
- Corrections to enhanced optical nonlinearity of superlatticesApplied Physics Letters, 1984
- Fast relaxing absorptive nonlinear refraction in superlatticesApplied Physics Letters, 1983
- Saturation of band-gap resonant optical phase conjugation in HgCdTeOptics Letters, 1983
- Theory of optical mixing by mobile carriers in superlatticesApplied Physics Letters, 1982
- Dynamic non-linear optical processes in semiconductorsAdvances in Physics, 1981
- Bandgap-resonant optical phase conjugation in n-type Hg_1−xCd_xTe at 106 μmOptics Letters, 1981
- Degenerate four-wave mixing near the band gap of semiconductorsApplied Physics Letters, 1979
- A new semiconductor superlatticeApplied Physics Letters, 1977
- Theory of Optical Mixing by Mobile Carriers in SemiconductorsPhysical Review Letters, 1966
- Optical Nonlinearities due to Mobile Carriers in SemiconductorsPhysical Review Letters, 1966