Properties of CuInSe2 Thin Film Semiconductors
- 1 January 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (S3)
- https://doi.org/10.7567/jjaps.19s3.23
Abstract
Thin films of the chalcopyrite compound CuInSe2 are prepared by D.C. sputtering and by vacuum evaporation on glass substrate. The films prepared by the two methods show remarkable differences in preferential growth orientation and other properties. In this paper, the physical and electronic properties of CuInSe2 films are described, and the influences of the growth conditions on their properties are discussed.Keywords
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