Two-electron band to band transitions in silicon
- 1 October 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 17 (7) , 823-825
- https://doi.org/10.1016/0038-1098(75)90729-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Relaxation of Auger-excited carriers in siliconSolid State Communications, 1974
- Auger recombination in germaniumPhysica Status Solidi (a), 1974
- Minority carrier lifetime in highly doped GeSolid State Communications, 1972
- Indirect Band-to-Band Auger Recombination in GePhysical Review Letters, 1968
- Analysis of intrinsic recombination radiation from silicon and germaniumJournal of Physics and Chemistry of Solids, 1959
- Radiation Resulting from Recombination of Holes and Electrons in SiliconPhysical Review B, 1956