Resonant degenerate four-wave mixing in GaAs multiquantum well structures
- 15 January 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (2) , 132-134
- https://doi.org/10.1063/1.93013
Abstract
We have observed degenerate four‐wave mixing, on a picosecond timescale, at the lowest two‐dimensional exciton resonance line of GaAs‐Al0.25Ga0.75As layer structures, grown by molecular beam epitaxy. Mixing is observed at exciton densities as low as 109 cm−2 per layer and is strongly resonant at the heavy exciton line, where the diffraction efficiency reaches a maximum of 12% for a 2×10−7 J/cm2 pump pulse.Keywords
This publication has 14 references indexed in Scilit:
- Confined carrier quantum states in ultrathin semiconductor heterostructuresPublished by Springer Nature ,2007
- Measurement of Exciton Diffusion Lengths in by Four-Wave Mixing TechniquesPhysical Review Letters, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980
- Spatial-diffusion measurements in impurity-doped solids by degenerate four-wave mixingOptics Letters, 1979
- Recent developments in molecular beam epitaxy (MBE)Journal of Vacuum Science and Technology, 1979
- GaAs/AlAs layered filmsThin Solid Films, 1979
- Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond ResolutionPhysical Review Letters, 1979
- Dynamics of Energy Transport in Molecular Crystals: The Picosecond Transient-Grating MethodPhysical Review Letters, 1978
- Low-temperature absorption spectrum in GaAs in the presence of optical pumpingPhysical Review B, 1977