Density of states and barrier height of metal-Si contacts
- 9 December 1971
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 4 (17) , 2849-2858
- https://doi.org/10.1088/0022-3719/4/17/016
Abstract
Using the surface Green function method of Garcia-Moliner and Rubio (1969-71) the extra density of states of metal-Si(110) contacts is studied in detail. This is then used to calculate the barrier height for a wide range of Sommerfeld metals. The surface position of the Fermi level relative to the band edges of the semiconductor depends on both the work function and the Fermi energy of the metal. Some arguments are put forward to the effect that a similar behaviour is expected for crystallographic orientations of the Si surface other than the (110). The calculations are actually in fair agreement with experimental data on (111) surfaces.Keywords
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