The effect of surface segregation on the light-emission intensity of Si/SiGe/Si heterostructures
- 7 July 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (2) , 232-234
- https://doi.org/10.1063/1.121765
Abstract
The correlation between the light-emission intensity from SiGe mixed crystals and Ge surface segregation during molecular beam epitaxy has been investigated. Atomic-hydrogen-assisted molecular beam epitaxy was used to vary the surface-segregation length of Ge. Results show that the photoluminescence (PL) intensity was very strong in the region where the surface-segregation length was less than 7 nm. However, when the surface-segregation length exceeded 7 nm, the PL intensity decreased sharply. A one-to-one correspondence between the PL intensity and the Ge segregation length was obtained. This is attributed to the dependence of the surface segregation on the degree of randomness in the SiGe alloy.Keywords
This publication has 13 references indexed in Scilit:
- Local-symmetry effect on light emissivity from SiGe quantum wellsThin Solid Films, 1997
- Formation and optical properties of SiGe/Si quantum structuresApplied Surface Science, 1996
- Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe HeterostructuresPhysical Review Letters, 1994
- Near-band-gap photoluminescence from pseudomorphic Si1−xGex single layers on siliconJournal of Applied Physics, 1992
- Are bare surfaces detrimental in epitaxial growth?Applied Physics Letters, 1991
- Well-resolved band-edge photoluminescence of excitons confined in strained quantum wellsPhysical Review Letters, 1991
- Reverse temperature dependence of Ge surface segregation during Si-molecular beam epitaxyJournal of Applied Physics, 1991
- Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloysApplied Physics Letters, 1990
- Near-band-gap photoluminescence of Si-Ge alloysPhysical Review B, 1989
- Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scatteringApplied Physics Letters, 1989