Preparation de Cristaux Preformes Par la Methode de la Goutte Pendante Application au Silicium
- 1 January 1978
- conference paper
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The growth of EFG silicon ribbonsJournal of Crystal Growth, 1977
- Surface Morphology and Shape Stability in Silicon Ribbons Grown by the Edge‐Defined, Film‐Fed Growth ProcessJournal of the Electrochemical Society, 1977
- Properties of profiled semiconductor single crystals grown by Stepanov's methodJournal of Crystal Growth, 1974
- Growth of controlled profile crystals from the melt: Part III — TheoryMaterials Research Bulletin, 1971
- Growth of controlled profile crystals from the melt: Part I - Sapphire filamentsMaterials Research Bulletin, 1971