Interface modification of refractory metal–silicon structures by ion implantation

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Abstract
A systematic study of the modifications of the transition metal–silicon interface by ion implantation was carried out. Interface mixing was observed to be a general result in samples implanted at temperatures of 78, 297, and 423 K. Elemental depth distributions obtained using Auger electron spectroscopy combined with ion sputtering illustrated composition plateaus near the interface of the ion-implanted structures. Additionally, high energy resolution Auger analyses of the silicon LVV transition for the implanted samples showed an energy shift and a change of the spectrum relative to the elemental silicon. The Auger-analysis results suggest that compound (silicide) formation can be induced by ion-implantation into transition metal–Si structures, even in cases where high temperatures are normally required for thermal reaction. The implications for potential applications to very large-scale integration of electronic devices are discussed.

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