Electron emission fromphosphorus- and boron-doped polycrystallinediamond films
- 5 January 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (1) , 74-75
- https://doi.org/10.1049/el:19950027
Abstract
The electron emission from CVD-grown phosphorus (P)- and boron (B)-doped polycrystalline diamond films has been studied. The current density against electric field characteristics of the P-doped film showed low-field emission compared to the B-doped film. From the slope ratio of the Fowler-Nordheim (F-N) characteristics of P- and B-doped films, a ratio of 0.66 for the emission barrier height was obtained. The small ratio might be caused by the n-type semiconducting properties of P-doped diamond films.Keywords
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