Hair Removal Using an 810 nm Gallium Aluminum Arsenide Semiconductor Diode Laser: A Preliminary Study

• 1 December 1999
• journal article
• research article
• Published by Wolters Kluwer Health in Dermatologic Surgery
• Vol. 25  (12) , 935-937
• https://doi.org/10.1046/j.1524-4725.1999.99174.x

Abstract

Keywords

• ALUMINUM
• TREATMENT
• LASER
• HAIR
• REMOVAL
• SEMICONDUCTOR
• GALLIUM
• DIODE
• ARSENIDE
• HIGHEST