Far-infrared magneto-optical studies of D− ions and many-electron effects on donor impurities in quasi-2D semiconductor structures
- 1 February 1993
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 184 (1-4) , 409-416
- https://doi.org/10.1016/0921-4526(93)90390-r
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Occupancy of shallow donor impurities in quasi-two-dimensional systems:andstatesPhysical Review Letters, 1992
- Far-infrared studies of the cyclotron-resonance line shape of two-dimensional electrons in silicon in the quantum limitPhysical Review B, 1991
- Two-dimensionalcentersPhysical Review Letters, 1990
- Anomalies in the cyclotron resonance of quasi-two-dimensional electrons in silicon at low electron densitiesPhysical Review Letters, 1990
- Cyclotron resonance in donor and acceptor δ-doped As/GaAs heterostructuresPhysical Review B, 1989
- Dynamical Conductivity of the GaAs Two-Dimensional Electron Gas at Low Temperature and Carrier DensityPhysical Review Letters, 1987
- Far-infrared absorption by shallow donors in multiple-well GaAs-As heterostructuresPhysical Review B, 1986
- Photoconductivity of confined donors in Al0.3Ga0.7As/GaAs quantum wellsJournal of Vacuum Science & Technology B, 1986
- Spectroscopic observation of D−, D° and cyclotron resonance lines in n-GaAs and n-InP at intermediate and strong magnetic fields and under different conditions of bias, temperature and pressureSolid State Communications, 1985
- Cyclotron resonance in two dimensionsPhysical Review B, 1984