Dual-source chemical vapour deposition of titanium sulfide thin films from tetrakisdimethylamidotitanium and sulfur precursors
- 29 September 2004
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry
- Vol. 14 (23) , 3474-3477
- https://doi.org/10.1039/b410390d
Abstract
The dual-source atmospheric pressure chemical vapour deposition (APCVD) of TiS2 thin films from [Ti(NMe2)4] and ButSH is presented. Deposition took place at low temperatures (175–500 °C) and nitrogen and carbon contamination of the films was negligible. The APCVD reaction of [Ti(NMe2)4] and But 2S2 resulted in the formation of a TiS2 film at 600 °C but at 300–550 °C films with a Ti:S ratio of 1:1 by EDXA were produced. In contrast, films produced from [Ti(NMe2)4] and S(SiMe3)2 at 350–600 °C contained little sulfur (TiS0.1–0.3) but large amounts of nitrogen and carbon indicating that titanium carbonitride (TiC0.5N0.5) had formed. The films were characterised by EDXA, SEM, XPS and Raman spectroscopy.Keywords
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