Photochemical hole burning of organic dye doped in inorganic semiconductor
- 6 March 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (10) , 1240-1242
- https://doi.org/10.1063/1.113249
Abstract
We report a new type photochemicalhole burningmaterial; organic dye, zincporphyrin,doped in inorganic semiconductor,titanium dioxide. The hole burning mechanism of this system is concluded to be photoionization via single‐photon process. The small temperature dependence of Debye–Waller factor was indicated by cyclic annealing experiment. A hole could be burned and observed at 140 K.Keywords
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