Improved geometry for a semiconductor surface-wave oscillator
- 13 July 1972
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 8 (14) , 351-352
- https://doi.org/10.1049/el:19720256
Abstract
It is shown theoretically that the recently observed negative conductance of an interdigital-electrode structure situated near a semiconductor surface is enhanced considerably if a configuration is chosen which is symmetrical with respect to a plane perpendicular to the carrier drift velocity. Furthermore, the threshold drift velocity may be much lower than in the original configuration.Keywords
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