Influence of a mechanical modulation on electrical transport in point-contact junctions

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Abstract
The influence of a mechanical modulation of the barrier thickness has been studied theoretically in metal-insulator-metal (MIM) point-contact junctions for different conduction mechanisms: thermoionic, tunnel, and constriction (tiny metallic microbridges) transport currents. Experiments have been carried out between 95 and 300 K on Au-Al2O3-Al systems. In the presence of a dc component, the alternating electrical current generated in the junction by the barrier modulation has been phase detected and analyzed with respect to the I-V characteristic, the junction dynamic resistance, the modulation amplitude, and the temperature. As predicted in the theoretical analysis, the results demonstrate that the tunneling current in the point-contact junction is very sensitive to the mechanical modulation.