On the density of localized levels in amorphous silicon
- 1 April 1979
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 18 (4) , 427-429
- https://doi.org/10.1007/bf00899699
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976