Some problems arising in hydrogen passivation of silicon by ion bombardment techniques
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 304-309
- https://doi.org/10.1016/0168-583x(85)90570-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Passivation par l'hydrogène de défauts recombinants dans les photopiles réalisées sur rubans de silicium polycristallin RADRevue de Physique Appliquée, 1984
- Hydrogen passivation of defects in silicon ribbon grown by the edge-defined film-fed growth processApplied Physics Letters, 1983
- Passivation of grain boundaries in siliconJournal of Vacuum Science and Technology, 1982
- Detection of minority-carrier traps using transient spectroscopyElectronics Letters, 1979