53 GHz-f/sub max/ Si/SiGe heterojunction bipolar transistors
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (11) , 2636
- https://doi.org/10.1109/16.163483
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/IEEE Electron Device Letters, 1992