Cathodoluminescence at p-n Junctions in GaAs
- 1 April 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (4) , 1387-1389
- https://doi.org/10.1063/1.1714315
Abstract
A decrease in the cathodoluminescence produced in GaAs by a scanning electron probe has been observed when the probe is close to a p‐n junction. The decreased intensity is shown to result from the drift of excess carriers across the junction. Measurements of the short‐circuit current of the diode confirm this interpretation and provide a means of estimating minority carrier diffusion lengths.This publication has 1 reference indexed in Scilit:
- Use of Electron Probes in the Study of Recombination RadiationJournal of Applied Physics, 1964