Frequency response of the surface inversion layer in silicon

• 1 January 1964
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
• Vol. 52  (8) , 971-972
• https://doi.org/10.1109/proc.1964.3196

Abstract

Keywords

• FREQUENCY RESPONSE
• RESPONSE SURFACE METHODOLOGY
• SILICON
• CAPACITANCE
• HYSTERESIS
• OXIDATION
• MOS CAPACITORS
• DELAY
• SEMICONDUCTOR PROCESS MODELING
• PREDICTIVE MODELS