Model for the quantised Hall effect due to inhomogeneities

Publisher Website
Google Scholar
Abstract
A model is described that enables the calculation of measured Hall resistance and magnetoresistance in the quantised Hall regime. In this approach, the inhomogeneity of the electron density, in combination with deep minima in the magnetoresistivity at integer filling factors, causes the quantisation effects. Calculations for a simplified situation yield temperature dependence in accordance with experiments. From these calculations the author concludes that determination of the density of states from the temperature dependence of the magnetoresistance is dangerous. Finally, he performs calculations for samples with large-scale inhomogeneities. He is able to reproduce the experimental results using this simple approach. Although the effects of localisation are not included, localisation can be combined with our inhomogeneity model.