C-V analysis of the Schottky barrier in semi-insulating semiconductors

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Abstract
We analyze the screening length and the base series admittance effect on the measurement of the barrier capacitance and voltage in semi‐insulating (SI) semiconductors. Specific experimental conditions are summarized which enable the utilization of C‐V analysis in SI materials. It is shown that under such experimental conditions the formula of Sah and Reddi for low‐frequency C‐V dependence can be applied for the calculation of the concentration of residual shallow impurities. These considerations are applied for the low‐frequency C‐V analysis of the Schottky barrier in SI GaAs:Cr formed by Au contact and the concentration of residual shallow donors is determined. Some limitations of the presented C‐V analysis are discussed.