Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

30 August 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (18) , 1522-1523
https://doi.org/10.1049/el:19900977

Abstract

The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R_s, C and L associated with the device structure.

Keywords

DOUBLE-BARRIER RESONANT TUNNEL DIODES
SMALL SIGNAL IMPEDANCE
GAAS-ALGAAS
NDR REGION
EQUIVALENT CIRCUIT
SEMICONDUCTOR DEVICES
TUNNEL DIODE
III-V SEMICONDUCTORS
CUT-OFF FREQUENCY
SELF-RESONANT FREQUENCY
DC BIAS

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