0.15 μm GaAs MESFETs applied to ultrahigh-speed static frequency dividers

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Abstract
0.15 μm gate-length FETs fabricated by SAINT using photolithography are applied to ultrahigh-speed static frequency dividers. Short channel effects are suppressed by a buried p-layer and shallow active layers formed by low energy implantations and rapid thermal annealing. The maximum cutoff frequency of the 0.15 μm gate-length FETs was 80.6 GHz. The maximum toggle frequency of the LSCFL one-quarter frequency divider is 26.8 GHz with a power dissipation of 263 mW.

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