High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy
- 16 January 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (2) , 79-81
- https://doi.org/10.1049/el:19860054
Abstract
Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79% and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8° (1.9 times diffraction limit) for a 100 μm-wide laser were obtained under pulsed conditions.Keywords
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