dV/dt Breakdown in power MOSFET's
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (1) , 1-2
- https://doi.org/10.1109/edl.1983.25623
Abstract
A model fordV/dtbreakdown in power MOSFET's is proposed. This model allows quantitative analysis ofdV/dtlimitation in power MOSFET circuits. Experimental results show good agreement with theoretical predictions.Keywords
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