InGaAs/GaAs vertical-cavity surface-emitting laserson (311)B GaAs substrate
- 11 May 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (10) , 805-806
- https://doi.org/10.1049/el:19950549
Abstract
InGaAs/GaAs vertical cavity top-emitting dielectric-mirror surface-emitting lasers have been fabricated on a (311)B GaAs substrate. The threshold current was 25 mA at a lasing wavelength of 0.97 µm under pulsed operation at room temperature. The output was linearly polarised in the [2̄33] direction.Keywords
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