Electronic Raman scattering from carbon acceptors in undoped GaAs-Al1-xGaxAs multiple quantum wells

This publication has 15 references indexed in Scilit:

• Acceptor spectra of ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As-GaAs quantum wells in external fields: Electric, magnetic, and uniaxial stress
  Physical Review B, 1985
• Screened Coulombic impurity bound states in semiconductor quantum wells
  Physical Review B, 1984
• Raman scattering from electrons bound to shallow donors in $\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}-{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ quantum-well structures
  Physical Review B, 1984
• Binding energies of acceptors in GaAs-AlxGa1−xAsquantum wells
  Physical Review B, 1983
• Anomalous polarization in the photoluminescence from Si-dopedGaAs−AlxGa1−xAsquantum-well samples
  Physical Review B, 1983
• Effects of MBE growth conditions on carbon contamination in GaAs
  Solid State Communications, 1983
• Far infrared impurity absorption in a quantum well
  Solid State Communications, 1983
• Energy spectra of donors inGaAs−Ga1−xAlxAsquantum well structures in the effective-mass approximation
  Physical Review B, 1982
• Extrinsic photoluminescence from GaAs quantum wells
  Physical Review B, 1982
• Hydrogenic impurity states in a quantum well: A simple model
  Physical Review B, 1981