Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film

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Abstract
We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K)=1.6. The value of ε(ω) is drastically different from that of the high-R state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ω p 2 in the metallic low-R state is estimated to be 1.2×109/cm3.