Wirelike Growth of Si on an Au/Si(111) Substrate by Gas Source Molecular Beam Epitaxy

1 January 1999

journal article
Published by The Electrochemical Society in Electrochemical and Solid-State Letters

Vol. 1 (4) , 188-190
https://doi.org/10.1149/1.1390680

Abstract

Ultrafine nanowires are grown on an substrate using gas source molecular beam epitaxy. These wires with cross‐ sectional dimensions between and grow mainly with a growth axis parallel to the 〈111〉 direction. The growth rate of nanowires is independent of their diameters, i.e., nanowires with different diameters have the same growth rate. From the dependence of source gas concentration on the growth rate we conclude that this independence is a fundamental one even when gas pressure ranges as high as . This method provides a possible alternative means for fabricating ultrafine silicon quantum wires. ©1998 The Electrochemical Society

Keywords

PHOTOLUMINESCENCE
THIN FILMS
GAN
APPLIED POTENTIAL
GAXIN1
ELECTRODES
ELECTROLYTES ELECTROLUMINESCENCE

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