A method of excitation profiling in high-field electroluminescence
- 1 September 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (5) , 386-388
- https://doi.org/10.1063/1.92739
Abstract
A method of quasidirect profiling of impact excitation of electroluminescence in a metal semiconductor junction utilizing the Auger quenching of a localized center luminescence by either free or weakly bound electrons is described. Experimental results obtained on CdF2:Mn,Y Schottky diodes unambiguously prove a spatial separation of the acceleration and collision excitation processes in high‐field electroluminescence.Keywords
This publication has 8 references indexed in Scilit:
- Auger quenching of luminescence in ZnS:MnSolid State Communications, 1981
- Semiconducting CdF2 : Mn—A new material for efficient blue-green electroluminescenceApplied Physics Letters, 1979
- Determination of the barrier height in metal-CdF2Schottky diodesJournal of Physics D: Applied Physics, 1978
- Physical mechanism of current conduction and light emission in high-resistivity ZnS:Mn thin filmsPhysica Status Solidi (a), 1977
- Shallow Donor States in Semiconducting CdF2Physica Status Solidi (b), 1974
- Evidence for two channel excitation of luminescence in CdF2:MnPhysica Status Solidi (a), 1974
- Electroluminescence in reverse-biassed Schottky diodesJournal of Luminescence, 1973
- Electrical Properties of Semiconducting Cd:YPhysical Review B, 1969