Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication Applications
- 26 March 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 25 (1) , 46-57
- https://doi.org/10.1109/jlt.2006.888923
Abstract
In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER=10-12) while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 degC, and 10-Gb/s operation is demonstrated at 85 degC. Error-free (BER-12) operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also providedKeywords
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