Static frequency dividers for high operating speed (25 GHz, 170 mW) and low power consumption (16 GHz, 8 mW) in selective epitaxial Si bipolar technology
- 10 June 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (12) , 1072-1074
- https://doi.org/10.1049/el:19930716
Abstract
Static frequency dividers have been fabricated in a selective epitaxial bipolar technology using 0.8 μm lithography. The measured maximum frequency of 25 GHz is the highest value reported for static silicon dividers. Moreover, a 16 GHz lowpower version is presented which consumes only 8 mW in the first stage.Keywords
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