A 150-215 GHz InP HEMT low noise amplifier with 12 dB gain
- 24 October 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We present a 150-215 GHz InP HEMT MMIC with greater than 12dB gain across this band. The MMIC is a 3-stage, single-ended microstrip design implemented using 0.07 mum T-gate InP HEMT MMIC technology with 50 mum substrateKeywords
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