Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates
- 23 March 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (13) , 133507
- https://doi.org/10.1063/1.1894611
Abstract
Free-standing micro/nanoelements of single-crystalsilicon with integrated doped regions for contacts provide a type of material that can be printed onto low-temperature device substrates, such as plastic, for high-performance mechanically flexible thin-film transistors(TFTs). We present simple approaches for fabricating collections of these elements, which we refer to as microstructured silicon ( μ s - Si ) , and for using spin-on dopants to introduce doped regions in them. Electrical and mechanical measurements of TFTs formed on plastic substrates with this doped μ s - Si indicate excellent performance. These and other characteristics make the material potentially useful for emerging large area, flexible ‘macroelectronic’ devices.Keywords
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