High-power SLM operation of 1.3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p -type InP substrate

11 October 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (21) , 881-882
https://doi.org/10.1049/el:19840598

Abstract

A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.

Keywords

INP/INGAASP
SEMICONDUCTOR JUNCTION LASERS
BURIED HETEROSTRUCTURE
DISTRIBUTED FEEDBACK LASER
HIGH-POWER SINGLE LONGITUDINAL MODE
AS-CLEAVED FACETS
LASER DIODE
P-TYPE INP SUBSTRATE
1.3 MICRONS WAVELENGTH
AR COATING

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