Single Crystal GaN Nanowires
- 1 September 2001
- journal article
- Published by American Scientific Publishers in Journal of Nanoscience and Nanotechnology
- Vol. 1 (3) , 303-308
- https://doi.org/10.1166/jnn.2001.041
Abstract
Single crystal gallium nitride nanowires have been obtained by heating gallium acetylacetonate in the presence of carbon nanotubes or activated carbon in NH3 vapor at 910 degrees C. GaN nanowires also were obtained when the reaction of gallium acetylacetonate with NH3 was carried out over catalytic Fe/Ni particles dispersed over silica. The former procedure with carbon nanotubes is preferable because it avoids the presence of metal particles in the nanowire bundles.Keywords
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