Microwave endless phase shifter using dual‐gate FET
- 1 January 1982
- journal article
- Published by Wiley in Electronics and Communications in Japan (Part I: Communications)
- Vol. 65 (6) , 61-69
- https://doi.org/10.1002/ecja.4410650609
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Performance of dual-gate GaAs MESFETs as gain-controlled low-noise amplifiers and high-speed modulatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- GaAs dual-gate Schottky-barrier FET's for microwave frequenciesIEEE Transactions on Electron Devices, 1975